Optoelectronic device with improved light extraction
US6746889B1 · kind B1 · utility
106Cited by
11References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2002 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Mar 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0217
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An improved method for producing optoelectronic devices such as light emitting diodes or laser diodes is provided. Light emitting diodes or laser diodes are provided with improved light extraction. Epitaxial layers including a light emitting p-n junction are deposited on a substrate, and separations are cut through the epitaxial layers to provide a structure including a plurality of individual dies on the substrate. The structure is mounted on a submount and the substrate is removed. An index matching material is then attached to improve light extraction from the optoelectronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.