High-k dielectric bird's beak optimizations using in-situ O2 plasma oxidation
US6746925B1 · kind B1 · utility
12Cited by
15References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 25, 2003 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Mar 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming an integrated circuit device, sidewall oxides are formed by plasma oxidation on the patterned gate. This controls encroachment beneath a dielectric layer underlying the patterned gate. The patterned gate is oxidized using in-situ O2 plasma oxidation. The presence of the sidewall oxides minimizes encroachment under the gate edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.