Manufacturing method for semiconductor device using photo sensitive polyimide etching mask to form viaholes
US6746938B2 · kind B2 · utility
30Cited by
13References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2002 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Jun 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method manufactures a semiconductor device by forming at least an active device on a principal surface of a semiconductor substrate; etching the semiconductor substrate to thereby form a viahole adjacent to an active region where the active device is formed; and forming a plated wiring including the inner wall of the viahole and extending to an electrode of the active device on the surface of the substrate. This method uses a photo sensitive polyimide material as an etching mask in the step of forming a viahole and can thereby form a fine viahole in a high yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.