Method for fabricating a semi-conductor device having a tungsten film-filled via hole
US6746962B2 · kind B2 · utility
2Cited by
10References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2001 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Oct 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first metal film is deposited on a bottom and a wall of a recess formed in an insulating film on a semiconductor substrate. A second metal film is filled in the recess on the first metal film. The second metal film is formed from a polycrystalline tungsten film having a crystal plane of a (110) orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.