Semiconductor device and method of fabricating thereof
US6747289B2 · kind B2 · utility
49Cited by
4References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2001 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | May 31, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/133504
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide means for forming projected and recessed portions for preventing mirror face reflection of a reflecting electrode without increasing steps, in a method of fabricating a reflection type liquid crystal display device, to achieve light scattering performance by providing recessed and projected portions at a surface of a pixel electrode, projected portions 701 and 702 are formed by the same photomask as that in forming TFT to thereby form projected and recessed portions at a surface of a pixel electrode 169.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.