Semiconductor device with trench gate
US6747295B2 · kind B2 · utility
11Cited by
9References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2003 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Jan 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
Abstract
An IGBT has a p-emitter layer and p-base layer, which are arranged on both sides of an n-base layer. A pair of main trenches are formed to extend through the p-base layer and reach the n-base layer. In a current path region interposed between the main trenches, a pair of n-emitter layers are formed on the surface of the p-base layer. A narrowing trench is formed to extend through the p-base layer and reach the n-base layer. The narrowing trench narrows a hole flow path formed from the n-base layer to the emitter electrode through the p-base layer, thereby increasing the hole current resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.