LDD structure of thin film transistor and process for producing same
US6747325B2 · kind B2 · utility
8Cited by
10References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 2, 2002 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Oct 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor having a single LDD structure is provided. The single LDD structure is disposed between source/drain structures, and having a first side adjacent to a first one of the source/drain structures and a second side spaced from a second one of the source/drain structures by essentially a semiconductor material. Another thin film transistor having a first kind of LDD and a second kind of LDD structure is also provided. The second kind of LDD structure is adjacent to the first kind of LDD structure. The process for manufacturing such thin film transistor is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.