Modified strain region of strain reactive slider with implanted ions, electrons or neutral atoms
US6747845B1 · kind B1 · utility
4Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2000 |
| Grant date | Jun 8, 2004 |
| Priority date | — |
| Expiry date | Feb 7, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/102
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
At least one modified strain region having a damage depth between 0.1 and 2 microns in a disk drive slider is created by implantation with ions, electrons or neutral atoms. The modified strain region induces a deformation of the disk drive slider. The nature and extent of this deformation is determined by the interaction between the slider and the modified strain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.