Method for forming a mask pattern
US6750073B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2002 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Dec 31, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A mask pattern is formed on a substrate by using a solvent absorbent mold having a pattern structure with a relief and an intaglio portion. A mask layer dissolved in a solvent to obtain fluidity is prepared on the substrate. The mold is pressed onto the mask layer with a predetermined pressure, and a portion of the mask layer that contacts with the relief portion of the mold is introduced into the intaglio portion thereof. Then, the mold absorbs the solvent contained in the mask layer to thereby solidify the mask layer. Next, the mold is separated from the substrate and the portion of the mask layer that contacts with the relief portion of the mold is removed, thus finally obtaining the desired minute mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.