Thin film transistor array, fabrication method thereof, and liquid crystal display device employing the same
US6750087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2003 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Apr 1, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
Abstract
A fabrication method of a thin film transistor array substrate includes a step of forming a gate insulation film, a semiconductor layer, an ohmic layer, and a metal film on the insulating substrate on which the gate line is formed, a step of forming a resist pattern on the metal film by a photolithography process so that its thickness is thinner on the corresponding section to the semiconductor active layer than on the other sections, a step of etching the metal film to form the source line, the source electrode, and the drain electrode, a step of removing the ohmic layer and the semiconductor layer after removing the resist on the corresponding section to the semiconductor active layer, a step of removing the metal film, and a step of removing the ohmic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.