Apparatus and method for forming single crystalline nitride substrate using hydride vapor phase epitaxy and laser beam
US6750121B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2002 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Mar 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to an apparatus and a method for forming a single crystalline nitride substrate, and more particularly, to an apparatus and a method for preventing cracks from being generated in a single crystalline nitride substrate. A method for forming a compound semiconductor substrate includes the steps of: a) preparing a parent substrate; b) forming a single crystalline film on the parent substrate in a reacting chamber; c) maintaining the single crystalline film in a predetermined temperature which is higher than a room temperature; and d) illuminating laser beam on a backside of the parent substrate and separating the single crystalline film from the parent substrate. Accordingly, the present invention provides a large single crystalline nitride substrate, by preventing cracks caused by the lattice mismatch with the parent substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.