Bipolar transistor with lattice matched base layer
US6750480B2 · kind B2 · utility
6Cited by
15References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2001 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Nov 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.