Surface emitting semiconductor laser and surface emitting semiconductor laser array
US6751242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2000 |
| Grant date | Jun 15, 2004 |
| Priority date | — |
| Expiry date | Dec 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser capable of controlling the polarization direction of laser light and a surface emitting semiconductor laser array. In a surface emitting semiconductor laser, a resonator is formed on a semiconductor substrate in the perpendicular direction, from which light is emitted in the direction perpendicular to the semiconductor substrate. The surface emitting semiconductor laser includes a columnar portion, which is part of the resonator, and an insulating layer formed in contact with the side of the columnar portion, wherein the insulating layer exhibits anisotropic stress caused by the planar configuration thereof, and the polarization direction of laser light is controlled by the anisotropic stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.