Transparent elastomeric, contact-mode photolithography mask, sensor, and wavefront engineering element
US6753131B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1999 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Oct 21, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A contact-mode photolithography phase mask includes a diffracting surface having a plurality of indentations and protrusions. The protrusions are brought into contact with a surface of positive photoresist, and the surface exposed to electromagnetic radiation through the phase mask. The phase shift due to radiation passing through the indentations as opposed to the protrusions is essentially complete. Minima in intensity of electromagnetic radiation are thereby produced at boundaries between the indentations and protrusions. The elastomeric mask conforms well to the surface of photoresist and, following development, features smaller than 100 nm can be obtained. Patterns including curved portions are obtained, as well as curved and/or linear patterns on non-planar surfaces. An elastomeric transparent diffraction grating serves also as a spatial light modulator photothermal detector, strain gauge, and display device. A technique for simplified photolithography is also described. A photoreactive, contoured surface is exposed to electricmagnetic radiation and contours in the surface alters the electromagnetic radiation to promote selective surface photoreaction. The contours can act as…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.