Process for wafer edge profile control using gas flow control ring
US6753255B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2002 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Jul 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical vapor deposition process controls the thickness of a film on an edge of a wafer by modifying the density of flow gases at the edge of the wafer through the use of a gas flow control ring. The deposition process is performed with the gas flow control ring disposed about a wafer holding region on a wafer holder. The top surface of the gas flow control ring is controlled relative to the top surface of the wafer to adjust the thickness of the film deposited on the wafer edge. In one particular embodiment, the gas flow control ring has a top surface in the same plane as the top surface of the wafer. In another embodiment, the deposition process is performed with the clearance between the inner diameter of the gas flow control ring and the periphery of the wafer minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.