Microswitch and method of manufacturing the same
US6753488B2 · kind B2 · utility
12Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2003 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Sep 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2001/0089
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Fine holes each having a diameter of scores of nanometers are formed in each of diamond thin films at an interval equal to the diameter of the fine hole, and metal electrodes each having a low resistivity are buried in the fine holes, and the distance between metal electrodes and the diamond thin films through which flows an electric current is set at an order of scores of nanometers so as to markedly lower the on-resistance. As a result, provided is a microswitch having a low on-resistance and utilizing the high reliability inherent in diamond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.