Growth-selective structure of light-emitting diode
US6753552B1 · kind B1 · utility
4Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2003 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Aug 2, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation layer selectively, and an n-GaN layer, an active layer, and a p-GaN layer on the buffer layer one after another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.