Quantum wire field-effect transistor and method of making the same
US6753593B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2000 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Dec 11, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/937
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A quantum wire field-effect transistor having at least one, one-dimensional, elongate conducting means (14) provided by at least a first semiconductor layer surrounded by a wider bandgap, second semiconductor layer (12, 13) and extending between source (24) and drain (26) electrodes, and in which there is provided a backgate structure (8, 23) to control conduction in the elongate conducting means. The transistor can be a Single Electron Transistor (SET) wherein two adjacent gate electrode (16, 18) are disposed over the elongate conducting means to induce a quantum dot (17) therein, and it can be made with the first semiconductor layer material as GaAs and the second semiconductor layer material as AlGaAs. A method of making the transistor involves preferentially growing the elongate conducting means at the bottom of a groove (6) lined with second semiconductor layer (12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.