Method for the fabrication of a diamond semiconductor
US6756086B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 6, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Mar 6, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A diamond semiconductor includes a high-quality thin diamond film layer with few crystal defects and few impurities, implanted with ions of dopant elements and controllable in conductivity determined by a kind and a concentration of the dopant elements. The diamond semiconductor is fabricated by a method including the step of implanting ions of dopant elements into a high-quality thin diamond film layer with few crystal defects and few impurities under conditions that can attain given distribution of concentrations of the dopant elements and with the high-quality thin diamond film layer kept to a temperature in accordance with the conditions so as not to be graphitized, to thereby enable the diamond semiconductor to have conductivity determined by a kind and a concentration of the dopant elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.