Patent · US Expired

Method of producing a ferroelectric memory and a memory device

US6756236B2 · kind B2 · utility

9Cited by

9References

40Claims

0Family size

Assignee

Sony International (Europe) GmbH · DE

Inventors

William Ford · Stuttgart, DE
Jurina Wessels · Stuttgart, DE
Tobias Vossmeyer · Fellbach, DE
Hidemi Tomita · Stuttgart, DE

Key dates

Filing date	Dec 4, 2001
Grant date	Jun 29, 2004
Priority date	—
Expiry date	Dec 4, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10B53/00
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

The present invention refers to a method of producing a ferroelectric memory which method comprises:a) providing ferroelectric particles,b) providing a substrate,c) orientating at least a subset of said ferroelectric particles such that there is an axis of said particles along which axis a dipole moment may be directed in the ferroelectric state, said axis having an orientation the average of which is in at least one predetermined direction with regard to a surface of said substrate,d) allowing said ferroelectric particles to attach to said substrate,and to a method of storing information on a substrate,and to a memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.