Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices
US6756237B2 · kind B2 · utility
23Cited by
6References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Mar 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Magnetic tunneling junction devices (MTJ) useful for sensing and memory applications and characterized by reduced resistance, magnetic noise, increased sensitivity, and increased magnetoresistance are disclosed herein. A method for fabrication of said MTJ is also disclosed wherein a series of materials are layered upon a substrate under controlled conditions, patterned and subjected to a period of annealing for simultaneously optimizing a plurality of performance parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.