Heterojunction bipolar transistor and its manufacturing method
US6756615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2003 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Apr 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
A heterojunction bipolar transistor comprises, an emitter made of a first compound semiconductor of a first conductivity type; a base made of a second compound semiconductor of a second conductivity type and having a bandgap smaller than the first compound semiconductor; and a collector made of a third compound semiconductor of a first conductivity type and having a bandgap wider than the second compound semiconductor. The emitter and the base form a heterojunction of type I. The base and the collector form a heterojunction of type II. Further, the base includes impurities by a concentration equal to or more than 5×1019 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.