Low-voltage and interface damage-free polymer memory device
US6756620B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Sep 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
Abstract
One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure may include spin-on and/or Langmuir-Blodgett deposited compositions.One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.