Simulator of semiconductor device circuit characteristic and simulation method
US6757873B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 26, 2001 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Jul 14, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
First characteristic values (SS, FF) which fluctuate most of the characteristic of a device composing a semiconductor device are obtained according to a fluctuation of manufacturing process for the semiconductor device. Next, the width (optimized K value) of a fluctuation width of manufacturing process which matches second characteristic values (C1, C16) of the worst cases of the characteristic of this device with the first characteristic values (SS, FF) is determined. Finally, a third characteristic value of the worst case of the circuit characteristic of the semiconductor device is determined based on this fluctuation width (optimized K value).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.