Magnetoresistive film, magnetoresistive head, information regeneration apparatus and magnetoresistive film manufacture method
US6759120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2000 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Jul 11, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is disclosed a magnetoresistive film in which increase of a coupling field accompanying thickness reduction of a middle layer is inhibited. The magnetoresistive film is a multilayered film including a pinned layer 3 having magnetization whose direction is fixed, a nonmagnetic middle layer 4 formed on the pinned layer, and a free layer 5 formed on the middle layer and provided with magnetization whose direction changes in accordance with an external magnetic field, the magnetoresistive film indicates a magnitude of resistance in accordance with an angle formed by the magnetization direction of the pinned layer and the magnetization direction of the free layer, and a copper oxide layer 7 of an oxide including a copper element is formed directly on the free layer, or on the free layer via an oxide layer 6 of a material fabricated by oxidizing a material constituting the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.