Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials
US6759252B2 · kind B2 · utility
1Cited by
4References
14Claims
0Family size
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Key dates
| Filing date | Jul 16, 2003 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Jul 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A passivation layer comprises a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir—Ta—O devices. The titanium-doped aluminum oxide layer for passivation of ferroelectric materials has reduced stress and improved passivation properties, and is easy to deposit and be oxidized. The passivation layer in the MFM Structure resists breakdown and peeling during annealing of the device in a forming gas ambient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.