Semiconductor device
US6759678B2 · kind B2 · utility
66Cited by
15References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2001 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Mar 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.