Low intermodulation film microwave termination
US6759919B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2003 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Feb 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/26
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A film microwave termination device includes a substrate, such as a ceramic substrate, and multiple film resistors formed on the substrate. The film resistors each have a predetermined resistivity generally less than a desired characteristic impedance of the device. The resistors are connected together in series so as to (i) provide an overall impedance equal to the desired characteristic impedance, and (ii) generate less intermodulation distortion in microwave signals coupled to the termination device than would be generated by an alternative termination device employing a single film resistor whose resistivity is equal to the desired characteristic impedance. In a disclosed 50-ohm termination, four square elements are formed of thick-film material having resistivity of 12.5 ohms per square, and these four elements are connected in series on the substrate to realize the desired 50 ohm termination impedance. Thin-film resistors may also be employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.