Large area silicon cone arrays fabrication and cone based nanostructure modification
US6761803B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2001 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Dec 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3151
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.