Patent · US Expired

Method for fabricating an isolated microelectromechanical system (MEMS) device using an internal void

US6761829B2 · kind B2 · utility

15Cited by
81References
54Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 26, 2001
Grant dateJul 13, 2004
Priority date
Expiry dateMar 7, 2022

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/0109
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method for fabricating an electrically isolated MEMS device having an outer stationary MEMS element and an inner movable MEMS element is provided that does not use a sacrificial layer. Rather, a pair of spacers are defined on the outer portions of the upper surface of a conductive wafer, and an insulating material is deposited thereon. The spacers are attached to a substrate to define an internal void therein. The wafer is then patterned to form the outer MEMS element as well as a conductive member for the inner MEMS element, separated from the outer MEMS element by a gap. A portion of the insulating layer that is disposed in the gap is then removed, thereby releasing the inner MEMS element from the stationary MEMS element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.