Material for making hyper frequency multi-layer chip inductors with high performance and low sintering temperature and a process for preparing the material
US6761839B2 · kind B2 · utility
3Cited by
0References
4Claims
0Family size
Inventors
Key dates
| Filing date | Aug 27, 2001 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Jul 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F17/04
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A composition of material used for making hfMLCIs having a sintering temperature below 1000°. The composition comprises a major component and a minor component, said major component being a general formula: Ba3Co2-x-yZnxCuyMnxFe24-z-wO41, wherein x, z, w,=0-1.0 and y=0-0.8, and said minor component comprising at least one compound selected from the group of Bi2O3, V2O5,PbO,B2O3, Lif and CaF2. HfMLCIs made from the composition of the present invention are capable of functioning in the frequency region of 300-800 MHz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.