Nanometer-scale semiconductor devices and method of making
US6762094B2 · kind B2 · utility
4Cited by
31References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 27, 2002 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Oct 13, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49128
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device including a substrate having a dopant of a first polarity, a first semiconducting structure including a dopant of a second polarity disposed over the substrate, and having substantially planar top and side surfaces. The semiconductor device includes a first junction, formed between the first semiconducting structure and the substrate, having an area wherein at least one lateral dimension is less than about 75 nanometers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.