Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies
US6762131B2 · kind B2 · utility
1Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2002 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Apr 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming atomic-scale structures on a surface of a substrate on a large-scale includes creating a predetermined amount of surface vacancies on the surface of the substrate by removing an amount of atoms on the surface of the material corresponding to the predetermined amount of the surface vacancies. Once the surface vacancies have been created, atoms of a desired structure material are deposited on the surface of the substrate to enable the surface vacancies and the atoms of the structure material to interact. The interaction causes the atoms of the structure material to form the atomic-scale structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.