Metal-assisted chemical etch to produce porous group III-V materials
US6762134B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Mar 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a Group III-V material surface. The surface is then etched in a solution including HF and an oxidant for a preferably brief period, as little as a couple seconds to one hour. A preferred oxidant is H2O2. Morphology and light emitting properties of porous Group III-V material can be selectively controlled as a function of the type of metal deposited, doping type, doping level, metal thickness, whether emission is collected on or off the metal coated areas and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.