Gas sensors using SiC semiconductors and method of fabrication thereof

US6763699B1 · kind B1 · utility

Assignee

• The United States of America as represented by the Administrator of Natural Aeronautics and Space Administration · US

Inventors

• Gary W. Hunter · Oberlin, US
• Philip G. Neudeck · Berea, US

Key dates

• Filing date: Feb 6, 2003
• Grant date: Jul 20, 2004
• Expiry date: Feb 6, 2023

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N27/129
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Gas sensor devices are provided having an atomically flat silicon carbide top surface that, in turn, provides for a uniform, and reproducible surface thereof.