Method of fabricating power rectifier device to vary operating parameters and resulting device
US6765264B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2003 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | May 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type formed in surface regions of second conductivity type in the first major surface adjacent to the gates. A plurality of channels of the second conductivity type each abuts a source/drain region and extends under a gate, each channel being laterally graded with a sloped P-N junction sepcarating the channel region from the substrate of first conductivity type, In fabricating the vertical semiconductor rectifier device, a partial ion mask is formed on the surface of the semiconductor with the mask having a sloped surface which varies the path length of ions through the mask to form laterally-graded channel regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.