RF pulse power amplifier
US6765442B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 7, 2003 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Mar 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/19
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) pulse power amplifier biased with a relatively low supply voltage generates one or more RF pulses having a relatively large output power. The RF pulse power amplifier may be configured as a push-pull power amplifier operating in class D mode including first and second sections, balanced-to-unbalanced (balun) transformer, and a load resistor coupled across the output winding of the balun transformer. Each section has a current source providing bias current, a MOS transistor, and a pair of bipolar transistors. Each section receives its input digital signal at the MOS transistor, which acts as a current switch for a bias current from a current source. With a relatively small voltage change in response to the input digital signal, the MOS transistor switches the bias current between itself and a transistor pair used to drive the corresponding half (input winding) of the balun transformer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.