Method for manufacturing ferroelectric thin film device, ink jet recording head, and ink jet printer
US6767085B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 8, 2002 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Nov 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/8554
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
It is an object of the present invention to control the crystal orientation of a ferroelectric thin film as dictated by the application of a ferroelectric thin film device. To accomplished the stated object, a bottom electrode containing at least iridium is formed over a surface preparation layer whose main component is zirconium oxide, and an ultra-thin titanium layer is laminated over the bottom electrode. An amorphous layer containing the elemental metal and elemental oxygen that constitute the ferroelectric is formed over the titanium layer, and a crystallized ferroelectric thin film is formed by heat treating this amorphous layer. If the thickness of the titanium layer is kept between 2 nm and 10 nm in the lamination thereof, the ferroelectric thin film will have a priority orientation of (100), and if it is kept between 10 nm and 20 nm, the ferroelectric thin film will have a priority orientation of (111).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.