Microwave power sensor and method for manufacturing the same
US6767129B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2002 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Nov 5, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K11/006
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microwave power sensor and a method for manufacturing the same. The microwave power sensor includes a semiconductor substrate with a nitride or oxide film formed thereon. A membrane which is a portion of the nitride or oxide film is floated by removing a portion of the semiconductor substrate. First and second thermocouple groups are formed to be symmetrically spaced apart from each other on the membrane. An RF input end is formed on the nitride or oxide film. A heating resistor is formed on the membrane to be connected with the RF input end. First and second ground plates are formed on the nitride or oxide film at both sides of the RF input end. A third ground plate is formed on the nitride or oxide film to be connected with the heating resistor and electrically connected with the first and second ground plates. The first and second output terminals are formed on the semiconductor substrate to be connected with the first and second thermocouple groups, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.