Surface modified organic thin film transistors

US6768132B2 · kind B2 · utility

Assignee

• 3M INNOVATIVE PROPERTIES COMPANY · US

Inventors

• Terrance P. Smith · Woodbury, US
• Mark J. Pellerite · Woodbury, US
• Tommie W. Kelley · Coon Rapids, US
• Dawn V. Muyres · Windom, US
• Dennis E. Vogel · Lake Elmo, US
• Kim M. Vogel · Lake Elmo, US
• Larry D. Boardman · Woodbury, US
• Timothy D. Dunbar · Woodbury, US

Key dates

• Filing date: Mar 7, 2002
• Grant date: Jul 27, 2004
• Expiry date: Jul 4, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S428/901
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors.