Semiconductor substrate and its production method, semiconductor device comprising the same and its production method
US6768175B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2001 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Mar 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When a SOI substrate is produced a first silicon layer epitaxially grown on the insulating underlay is ion implanted to make deep part of interface of the silicon layer amorphous, and then annealed to recrystallize. Next, the silicon layer is heat treated to oxidize part of the surface side, and after the silicon oxide is removed by etching, a silicon layer is epitaxially grown on the remaining first silicon layer to form a second silicon layer. Subsequently, the second silicon layer is again ion implanted to make deep part of interface amorphous, then annealing is performed to recrystallize. With this method, a SOI substrate, which is very small in crystal defect density of the silicon layer and good in surface flatness, can be produced. Therefore, on the semiconductor substrate an electronic device or optical device having high device performance and reliability can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.