Electrostatic discharge protection circuit
US6768176B1 · kind B1 · utility
6Cited by
4References
32Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 9, 2002 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Oct 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
The present invention provides an over-voltage protection circuit using a Zener diode and transistor. By disposing at least one junction region of the Zener diode outside of the base region of the transistor, a tight (i.e., with small variation) and suitably high reverse breakdown voltage is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.