Self-aligned aperture masks having high definition apertures
US6770425B2 · kind B2 · utility
1Cited by
21References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2003 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Apr 15, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B3/0056
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Self-aligned aperture masks are produced using a positive-acting photoresist (18) which is developed with a liquid developer. The apertures (30) of the mask have lower levels of inter-aperture variability than masks produced using mechanical transfer of toner particles (FIGS. 4-5 and 7-8), both for the apertures of a given mask and between masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.