Patent · US Expired

Method for fabricating semiconductor layers

US6770542B2 · kind B2 · utility

25Cited by

4References

16Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Andreas Plössl · Regensburg, DE
Berthold Hahn · Hemau, DE
Dominik Eisert · Regensberg, DE
Stephan Kaiser · Regensburg, DE

Key dates

Filing date	Dec 20, 2002
Grant date	Aug 3, 2004
Priority date	—
Expiry date	Dec 22, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/2007
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to the carrier and an auxiliary carrier is applied to that side of the useful layer that is remote from the carrier by a connecting layer at a joining temperature. Afterward, the carrier is stripped away at a temperature that is greater than or equal to the joining temperature and is less than the melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier is removed from the carrier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.