Integrated fuse with regions of different doping within the fuse neck
US6770948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2003 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Apr 9, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated fuse has regions of different doping located within a fuse neck. The integrated fuse includes a polysilicon layer and a silicide layer. The polysilicon layer includes first and second regions having different types of dopants. In one example, the first region has an N-type dopant and the second region has a P-type dopant. The polysilicon layer can also include a third region in between the first and second regions, which also has a different dopant. During a fusing event, a distribution of temperature peaks around the regions of different dopants. By locating regions of different dopants within the fuse neck, agglomeration of the silicide layer starts reliably within the fuse neck (for example, at or near the center of the fuse neck) and proceeds toward the contact regions. An improved post fuse resistance distribution and an increased minimum resistance value in the post fuse resistance distribution is realized compared to conventional polysilicon fuses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.