Semiconductor device and method for fabricating the same
US6770977B2 · kind B2 · utility
7Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Feb 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the &bgr;-crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.