Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides

US6771868B2 · kind B2 · utility

Assignee

• Little Optics Inc · US

Inventors

• Frederick G. Johnson · Lanham, US
• Oliver S. King · Frederick, US
• John Hryniewicz · Columbia, US
• Lance G. Joneckis · Severna Park, US
• Sai Chu · Kowloon, CN
• David M. Gill · Pasadena, US

Key dates

• Filing date: Jun 20, 2003
• Grant date: Aug 3, 2004
• Expiry date: Jun 20, 2023

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B2006/121
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.