Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
US6773504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Apr 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen, and oxygen to the C-Plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C planes on the seed crystal, maintaining the facets on the C-Plane gallium nitride crystal and allowing oxygen to infiltrate via the non-C-Plane facets to the gallium nitride crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.