Transparent electroconductive film and process for producing same
US6773636B2 · kind B2 · utility
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2Claims
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Key dates
| Filing date | Mar 22, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Mar 22, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There are provided:(1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously:(i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and(ii) a target (B) for sputtering, which comprises Sb,(2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and(3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.