Method of manufacturing a semiconductor device
US6773944B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 5, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Jan 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
Abstract
A semiconductor device is provided which is constituted by semiconductor devices including a thin film transistor with a GOLD structure, the GOLD structure thin film transistor being such that: a semiconductor layer, a gate insulating film, and a gate electrode are formed in lamination from the side closer to a substrate; the gate electrode is constituted of a first-layer gate electrode and a second-layer gate electrode shorter in the size than the first-layer gate electrode; the first-layer gate electrode corresponding to the region exposed from the second-layer gate electrode is formed into a tapered shape so as to be thinner toward the end portion; a first impurity region is formed in the semiconductor layer corresponding to the region with the tapered shape; and a second impurity region having the same conductivity as the first impurity region is formed in the semiconductor layer corresponding to the outside of the first-layer gate electrode, which is characterized in that a dry etching process consisting of one step or two steps is applied to the formation of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.